{"product_id":"heteroepitaxial-ge-on-si-using-iii-v-buffers-von-peter-nguyen","title":"Heteroepitaxial Ge on Si Using III-V Buffers","description":"\u003cp\u003eMitigating the power concerns involved with the aggressive shrinking of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistors requires the adoption of high-mobility, alternative materials such as Germanium (Ge). Although the use of Ge in bulk form is cost-prohibitive, creative methods such as the application of Ge on to Si substrate via a buffer layer ¿bridge¿ helps drive the feasibility of the use of Ge for novel, low-power applications using standard CMOS processes. This work explores the electrical and material characteristics of MOS capacitors fabricated on crystallographic Ge integrated on to Si substrate via AlAs\/GaAs buffers. Electrical characteristics of different crystallographically oriented Ge integrated on AlAs\/GaAs buffers and the tunability of a key device characteristic known as threshold voltage is demonstrated as well. Thus, this research demonstrates the feasibility of the use of Ge integrated on Si via AlAs\/GaAs buffer layers for high-speed, low-power electronic devices.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783659928611\"\u003e\u003ch3\u003e\u003c\/h3\u003e\u003c\/div\u003e","brand":"Libri","offers":[{"title":"Softcover - 9783659928611","offer_id":39435175034973,"sku":"9783659928611","price":64.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/c6bcfea0-f54c-4e23-a783-6c5553be9116.jpg?v=1770448605","url":"https:\/\/shop.autorenwelt.de\/en\/products\/heteroepitaxial-ge-on-si-using-iii-v-buffers-von-peter-nguyen","provider":"Autorenwelt Shop","version":"1.0","type":"link"}