{"product_id":"diffusion-and-clustering-of-b-in-si-von-elena-bruno","title":"Diffusion and clustering of B in Si","description":"\u003cp\u003eSince the invention of the transistor at Bell Laboratories in the United States in 1947, almost all areas of our life have been touched by microelectronics, where silicon plays a dominant role as a basic material. Indeed, a continuous trend towards smaller but more powerful devices has been evidenced. Nonetheless, this miniaturization has been limited by difficulties in semiconductor device fabrication, further hampered by physical limits. Among dopants, B is absolutely the most used impurity to create p-type doped regions in silicon. Unfortunately the interaction with defects generated during the common industrial steps for devices production makes B to strongly diffuse and precipitate, hindering its use for ultra-shallow junction creation. Hence, new studies are required to face the problem.  We deeply investigated the interaction of high B doped regions with the excess of defects generated by ion implantation and thermal annealing, as far as B precipitation, i.e. electical deactivation, and diffusion are concerned. The found results are hence used to develop new methodologies in order to control these two phenomena, by appropriate defect engineering.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783838388366\"\u003e\u003ch3\u003ebasics and defect engineering\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783838388366","offer_id":39469223280733,"sku":"9783838388366","price":68.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/975758b1-f904-4940-8e25-df853d3e8e0d.jpg?v=1757654750","url":"https:\/\/shop.autorenwelt.de\/en\/products\/diffusion-and-clustering-of-b-in-si-von-elena-bruno","provider":"Autorenwelt Shop","version":"1.0","type":"link"}