{"product_id":"device-characterization-of-dy-incorporated-hfo2-gate-oxide-nmos-device-von-tackhwi-lee","title":"Device characterization of Dy-incorporated HfO2 gate oxide nMOS device","description":"\u003cp\u003eDy-incorporated HfO2 gate oxide with TaN gate  electrode nMOS device has been developed for high  performance CMOS applications in 22nm node  technology. This DyO\/HfO gate dielectrics shows the  thin EOT with reduced leakage current compared to  HfO2. Excellent electrical performances of the  DyO\/HfO gate oxide n-MOSFET such as lower VTH, higher drive current, and improved channel electron  mobility are demonstrated. DyO\/HfO sample also shows  a better immunity for VTH  instability and less  severe charge trapping characteristics. Its charge  trapping characteristics such as SILC and PBTI, VTH  shift mechanism by Dy incorporation and dielectric  reliability have been intensively investigated with  a band diagram and proper models in this work. As an  application of the characterization to NAND Flash  memory device, HfON charge-trap layered NAND Flash  memory is developed for high performance memory  device and its reliability issues including the  endurance and retention are discussed.\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783844393422\"\u003e\u003ch3\u003eDevice characteristics and reliability of DyO\/HfO gate dielectrics and the application to NAND  Flash memory\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783844393422","offer_id":39497042722909,"sku":"9783844393422","price":59.0,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/a3a61a14-4fc6-4cc3-9c9d-d1ffd23676f6.jpg?v=1757911844","url":"https:\/\/shop.autorenwelt.de\/en\/products\/device-characterization-of-dy-incorporated-hfo2-gate-oxide-nmos-device-von-tackhwi-lee","provider":"Autorenwelt Shop","version":"1.0","type":"link"}