{"product_id":"4h-silicon-carbide-mosfet-von-gang-liu","title":"4H-Silicon Carbide MOSFET","description":"\u003cp\u003eSilicon carbide is the only wide band gap semiconductor that has a native oxide, and a leading candidate for development of next-generation, energy efficient, high power metal-oxide-semiconductor field effect transistors (MOSFETs). Progress in this technology has been limited by the semiconductor-dielectric interface structure and its effect on the inversion layer mobility. The major objective of this work is to study and improve 4H-SiC MOSFET interface structure, defect states and inversion layer mobility on the (11-20) crystal face of SiC (a-face), employing nitrogen and phosphorous passivation. We also use these results to explore the effect of reactive ion etching on the a-face, an important aspect of processing optimum power devices. We correlate electrical measurements, i.e. current-voltage (I-V) and capacitance-voltage (C-V) with physical characterization including X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and medium energy ion scattering (MEIS).\u003c\/p\u003e\u003cdiv class=\"aw-variant-hidden-subtitle-div\" id=\"aw-variant-subtitle-9783639712483\"\u003e\u003ch3\u003eInterface Structure, Defect States and Inversion Layer Mobility\u003c\/h3\u003e\u003c\/div\u003e","brand":"Autorenwelt Shop","offers":[{"title":"Softcover - 9783639712483","offer_id":39482404503645,"sku":"9783639712483","price":59.9,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0940\/0622\/files\/0ea8f67b-babd-45c7-9361-d850404d1f41.jpg?v=1770700773","url":"https:\/\/shop.autorenwelt.de\/en\/products\/4h-silicon-carbide-mosfet-von-gang-liu","provider":"Autorenwelt Shop","version":"1.0","type":"link"}